Deposition and characterization of thermoelectric Pd-doped Bi2Te3 thin films prepared by DC co-magnetron sputtering

The morphology, structure, and chemical composition of Pd-doped Bi2Te3 film can be adjusted by the co-sputtering technique. The prepared films exhibit the crystalline phase forming of Bi2Te, BiTe, Bi2Te3, andicosahedral Pd at room temperature deposition. Pd-doped Bi2Te3 shows thermoelectric properties as N-type semiconductors but good electrical resistivity, moderate Seebeck coefficient, and fair power factor.

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