Fabrication of ZnO thin films at Low-pressure High-frequency Plasma Using Zn powder with Ar + O2 mixture gas for Solar Cells Applications

The study reports the fabrication and characterization of ZnO thin films deposited on Si (100) wafers at
low-pressure high-frequency plasma under Zn powder/Ar + O2 mixture gas by PECVD technique. The
increasing in the deposition rate was reached by increasing temperature from 250-400 °C. As a result, we
were able to generate plasma by using gas with powder. Which then, this method could be responsible for
preparing ZnO/Si thin films with developed quality for solar cells applications.