How UV irradiation enhances electrical conductance at a grain boundary in SrTiO3

บทความในวารสาร

ผู้เขียน/บรรณาธิการ

กลุ่มสาขาการวิจัยเชิงกลยุทธ์

รายละเอียดสำหรับงานพิมพ์

รายชื่อผู้แต่ง: Sriondee M., Nammahachak N., Eknapakul T., Rattanachata A., Euaruksakul C., Nakajima H., Triamnak N., Sinthiptharakoon K., Meevasana W., Ratanaphan S.

ผู้เผยแพร่: Elsevier

ปีที่เผยแพร่ (ค.ศ.): 2024

Volume number: 246

นอก: 1359-6462

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85187791326&doi=10.1016%2fj.scriptamat.2024.116069&partnerID=40&md5=8bc0665954f9f42436aaecb068a3058f

ภาษา: English-Great Britain (EN-GB)

ดูบนเว็บไซต์ของสำนักพิมพ์

บทคัดย่อ

Electrical conductance measured from across or parallel to a {110} symmetrical grain boundary in SrTiO3 is considerably lower than the ones of the adjoined (100) grains and a SrTiO3 (100) single crystal, but these differences are decreased significantly upon UV irradiation. Based on ultraviolet photoelectron spectroscopy and complementary conductive atomic force microscopy, we demonstrate that the hundredfold increases in the electrical conductance measured at the grain boundary are strongly associated with the ultraviolet-induced oxygen vacancies. Our results reveal the possibility of tuning the oxygen vacancies and electrical conductance at the grain boundary simply by UV irradiation, offering novel strategies for optoelectronic applications. © 2024 Acta Materialia Inc.

คำสำคัญ

Crystallographic defects, Electronic devices, Grain boundary, Transition metal oxides, Ultraviolet photoelectron spectroscopy