High-rate Deposition of Crystalline TiHfN Ultra-thin Films by Closed-field Dual-cathode DC Unbalanced Reactive Magnetron Sputtering without External Substrate Heating

บทความในวารสาร

ผู้เขียน/บรรณาธิการ

กลุ่มสาขาการวิจัยเชิงกลยุทธ์

รายละเอียดสำหรับงานพิมพ์

รายชื่อผู้แต่ง: Phae-Ngam W., Prathumsit J., Gitgeatpong G., Chaikeeree T., Bodinthitikul N., Lertvanithphol T., Horprathum M., Jutarosaga T.

ผู้เผยแพร่:  Rangsit University

ปีที่เผยแพร่ (ค.ศ.): 2024

ชื่อย่อของวารสาร: JCST

Volume number: 14

Issue number: 3

นอก: 2630-0583

eISSN: 2630-0656

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85203588585&doi=10.59796%2fjcst.V14N3.2024.48&partnerID=40&md5=798950238ee3f00bfd4dff28a6ca4e85

ภาษา: English-Great Britain (EN-GB)

ดูบนเว็บไซต์ของสำนักพิมพ์

บทคัดย่อ

High deposition rate titanium hafnium nitride (TiHfN) ultra-thin film deposition was successfully prepared by closed-field dual-cathode DC unbalanced reactive magnetron sputtering. All prepared films were polycrystalline. The morphology and atomic composition of the TiHfN ultra-thin film were characterized by field-emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The columnar structure could be promoted by increasing the deposition time. Lastly, the surface-enhanced Raman scattering (SERS) activity was investigated by Rhodamine 6G (R6G) drop-dried TiHfN ultra-thin film surface. The TiHfN ultra-thin films deposited at 20 s were found to have a high SERS activity, whose detection of R6G molecule at 10-5 M. The result could open preliminary studies on ternary transition metal nitride (TTMN) thin films for the alternative plasmonic sensors as SERS chips. © 2018-2024, Rangsit University.

คำสำคัญ

crystalline, TiHfN, unheated substrate