Recent advances in precision deposition techniques on semiconductor surfaces: Mechanisms, methods, and applications

บทความปริทัศน์


ผู้เขียน/บรรณาธิการ


กลุ่มสาขาการวิจัยเชิงกลยุทธ์


รายละเอียดสำหรับงานพิมพ์

รายชื่อผู้แต่งHao Zhu, Wenqi Zhang, Kangcheng Zhao, Chaolong Jin, Zhaoyang Zhang, Kun Xu, Yang Liu, Jingtao Wang, Viboon Saetang

ผู้เผยแพร่Elsevier

ปีที่เผยแพร่ (ค.ศ.)2025

Volume number48

หน้าแรก113495

นอก2352-4928

eISSN2352-4928

URLhttps://www.sciencedirect.com/science/article/abs/pii/S2352492825020070


ดูบนเว็บไซต์ของสำนักพิมพ์


บทคัดย่อ

Precise and spatially controlled deposition of thin films, lines, dots, and functional patterns on semiconductor surfaces is essential for the continued scaling and performance enhancement of integrated circuits, photovoltaics, and emerging micro/nanoelectronic devices. This review provides a comprehensive overview of both established and emerging deposition techniques, with a particular focus on precision processes. The fundamental mechanisms governing material nucleation and growth on semiconductor substrates are first introduced, followed by a discussion of conventional approaches. Physical vapor deposition (PVD) and chemical vapor deposition (CVD) enable high-purity film formation but are limited by high thermal budgets and vacuum requirements. Electrodeposition offers a low-cost alternative for metallization, although maintaining uniformity and resolution at the microscale remains challenging. The review then highlights recent developments in advanced deposition methods. Laser-assisted deposition allows for localized, low-temperature processing via photothermal effects, offering promising capabilities for site-selective metallization. Atomic layer deposition (ALD) provides sub-nanometer thickness control and excellent conformity yet suffers from slow deposition rates and process complexity. Furthermore, the review elucidates how precision deposition technologies address critical industrial requirements, such as cost-efficient photovoltaic interfaces and high-aspect-ratio 3D interconnects. Looking ahead, the integration of laser, electrochemical, and atomic layer techniques into hybrid platforms, combined with intelligent process monitoring and environmentally benign chemistries, is expected to drive further progress. A deeper understanding of interfacial reaction dynamics at the atomic scale will be key to enabling next-generation semiconductor architectures with enhanced precision, functionality, and sustainability.


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อัพเดทล่าสุด 2025-13-08 ถึง 12:00