Ultrasonic vibration grinding of next-generation semiconductor substrate materials；1st report -Prototype of self-vibrating ultrasonic vibration grinding wheel-

Currently, silicon (Si) substrates are widely used for semiconductor substrates, and the manufacturing process for these substrates is very rational. However, the next-generation semiconductor substrate materials, SiC and GaN, are difficult-to-cut materials with characteristics such as being extremely hard compared to Si. Therefore, there are issues such as increased processing time and costs when using conventional manufacturing equipment for Si substrates. In this study, first, we develop a self-vibrating ultrasonic vibration grinding wheel that can be used with existing semiconductor substrate manufacturing equipment and can apply ultrasonic vibration to the grinding wheel1,2). Second, we investigate and consider the grinding efficiency and grinding accuracy of next-generation semiconductor substrates such as SiC using this self-vibrating ultrasonic vibration grinding wheel. In this report, we investigated the installation method of piezoelectric ceramics (PZT) to effectively generate ultrasonic vibration on the base metal of the self-vibrating ultrasonic vibration grinding wheel.