Ultrasonic vibration grinding of next-generation semiconductor substrate materials

Ultrasonic vibration grinding is widely recognized as an effective method for precision and high-efficiency machining of next-generation, high hardness semiconductor substrates such as SiC1-3). It finds applications in wafer edge profiling, chamfering, orientation-flat polishing, and as a pre processing stage for wafer surface grinding and polishing. Moreover, ultrasonic vibration grinding holds promise for post-patterning wafer dicing4). In this study, we performed plunge grinding with a 3 mm-diameter electroplated grinding wheel, simulating notch grinding of SiC wafers under ultrasonic vibration. We investigated the resulting surface characteristics and processing efficiency. The results demonstrated improved surface roughness, reduced chipping at the notch edges, and enhanced processing efficiency.