Thermoelectric power generation based on the Pd-doped Bi2Te3 thin film flexible modules
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Author list: Limwichean, S.; Sriporaya, K.; Vora-Ud, A.; Chittinan, D.; Insawang, M.; Wongdamnern, N.; Muthitamongkol, P.; Horprathum, M.; Kasayapanand, N.
Publisher: Springer
Publication year: 2025
Journal: Journal of Materials Science (0022-2461)
Volume number: 36
Issue number: 31
Start page: 2039
ISSN: 0022-2461
eISSN: 1573-4803
Languages: English-Great Britain (EN-GB)
Abstract
The Pd-doped Bi2Te3 thin film flexible modules were fabricated using a co-magnetron sputtering system on polyimide flexible substrates. Through the optimization of Pd-doped Bi2Te3 thin films, we employed a co-magnetron sputtering technique with varying DC sputtering powers on the Pd target (0, 4, 8, and 12W). In contrast, the pulsed-DC power source for the Bi2Te3 target was fixed at 30 W. It was found that increasing the Pd content reduced the electrical resistivity. In contrast, a low concentration of Pd increased the negative Seebeck coefficient. At room temperature, the maximum power factor of 1.34 × 10⁻4 W m⁻1 K⁻2 (ρ = 48.5 μΩ·m, S = –80 μV K⁻1) was observed for the Pd-doped Bi2Te3 thin film (Pd_4W) sample. The practical application of the Pd-doped Bi2Te3 thin film (Pd_4W) was demonstrated in a thermoelectric module comprising five couples of Pd-doped Sb2Te3 (p-type) and Pd-doped Bi2Te3 (n-type) thin films, achieving an output power of 24 nW at ΔT = 65 K. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2025.
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