A comparative study of ion-assisted e-beam evaporated titania thin films
บทความในวารสาร
ผู้เขียน/บรรณาธิการ
กลุ่มสาขาการวิจัยเชิงกลยุทธ์
ไม่พบข้อมูลที่เกี่ยวข้อง
รายละเอียดสำหรับงานพิมพ์
รายชื่อผู้แต่ง: Eiamchai P., Chindaudom P., Pokaipisit A., Limsuwan P.
ผู้เผยแพร่: World Scientific Publishing
ปีที่เผยแพร่ (ค.ศ.): 2010
วารสาร: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Atomic, Molecular and Optical Physics (0217-9792)
Volume number: 24
Issue number: 18
หน้าแรก: 3513
หน้าสุดท้าย: 3528
จำนวนหน้า: 16
นอก: 0217-9792
eISSN: 1793-6578
ภาษา: English-Great Britain (EN-GB)
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บทคัดย่อ
Titanium dioxide has been in close examination for application development due to its high index of refraction and transparency across the visible range. One of the most active researches is hydrophilicity and photocatalysis in TiO2 films. In this study, a close investigation to TiO2 films' microstructural transformation was examined. A number of thin film samples were prepared by ion-assisted electron-beam evaporation at 200-nm nominal thickness, 2.0 ล/s deposition rate and 250ฐC deposition temperature. The varying parameter was the oxygen flow rate at 2, 4, 6 and 8 sccm. The films were eventually annealed for three hours in air atmosphere. The crystalline structures of as-deposited (ASD) and annealed films were deduced by variable-angle spectroscopic ellipsometry (VASE), and supported by X-ray diffractometry (XRD) and atomic force microscopy (AFM). Film characterization based on VASE is desirable in order to understand physical and optical characteristics of the films. Transmittance spectra were derived from UV/Vis spectrophotometer. It was found that all as-deposited films were all amorphous with low luminous transmittance. Higher oxygen flow rate during the deposition, however, resulted in sub-oxide TiO2 film. With this film, annealing at 300 and 500ฐC were presumed as transition temperatures for amorphous-to-anatase and anatase-to-rutile phases, respectively. The luminous transmittance also increased and was found to be the highest at 75.75% at 400ฐC annealing. The optical energy band gap for this film also increased up to 3.26 eV at 600ฐC annealing. ฉ 2010 World Scientific Publishing Company.
คำสำคัญ
Ellipsometry