Characterization of nanostructured TiZrN thin films deposited by reactive DC magnetron co-sputtering
Conference proceedings article
Authors/Editors
Strategic Research Themes
No matching items found.
Publication Details
Author list: Chinsakolthanakorn S., Buranawong A., Witit-Anun N., Chaiyakun S., Limsuwan P.
Publisher: Elsevier
Publication year: 2012
Volume number: 32
Start page: 571
End page: 576
Number of pages: 6
ISSN: 1877-7058
Languages: English-Great Britain (EN-GB)
View in Web of Science | View on publisher site | View citing articles in Web of Science
Abstract
The ternary nitride TiZrN thin films were deposited by reactive DC Magnetron co-sputtering technique with different titanium sputtering current (ITi) ranging from 0.6 to 1.2 A, using individual Ti and Zr co-sputtered targets at constant deposition time. The Ar to N2 flow rate ratio was fixed at 8:6 sccm. The crystal structure, surface morphology microstructure and element compositions were investigated by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FE-SEM). It was found that the crystal structure, surface morphology, microstructure and element compositions of the films are strongly dependent on the deposition parameters. All the films are composed of TiZrN crystal structure (111) (200) and (220) planes with preferred orientation of (200) plane. The crystallinity of the films changed as a function of Ti sputtering currents. The AFM measurement indicated that the coarse and congregate grain with increasing of ITi were not only enhanced root mean square roughness (Rrms) from 2.7 to 11.6 nm, but also increases average thickness continuously from 347.1 nm to 751.8 nm. With the increase of ITi the atomic ratio of Ti to Zr elements and the N to (Ti + Zr) ratio increased to 0.9 and 1.6, respectively. ฉ 2010 Published by Elsevier Ltd.
Keywords
Reactive DC Magnetron Co-sputtering, Titanium Sputtering Current, TiZrN
Contact Information