Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE
Conference proceedings article
ผู้เขียน/บรรณาธิการ
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รายชื่อผู้แต่ง: Jantawongrit P., Sanorpim S., Yaguchi H., Orihara M., Limsuwan P.
ผู้เผยแพร่: Elsevier
ปีที่เผยแพร่ (ค.ศ.): 2012
Volume number: 32
หน้าแรก: 882
หน้าสุดท้าย: 887
จำนวนหน้า: 6
นอก: 1877-7058
ภาษา: English-Great Britain (EN-GB)
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บทคัดย่อ
The effect of the off-cut angle of a 4H-SiC (0001) substrate on the growth of InN thick layer by RF-plasma assisted molecular beam epitaxy (RF-MBE) has been investigated. The off-cut angle used in this study was inclined from 0° (just surface) toward the [11-20] direction of 4° and 8°. Crystalline quality and surface morphology were remarkably sensitive to the value of off-angle. Higher off-cut angles result in a reduction of the full-widths at half-maximum of HRXRD (0002) ω-scans, compared to that of the layer on the (0001)-just surface. In addition, the full-widths at halfmaximum of μ-Raman scattering spectra at 490 cm-1, which is attributed to E2 (high) phonon mode, was decreased with increase in off-cut angle. Furthermore, In-droplets, which are commonly observed on the (0001) InN grown surface under In rich-growth condition, were found to be suppressed owing to an improvement of a nucleation on the off-cut angle surface. In our case, the use of 8°-off substrate increased film density and growth rate, while a surface roughness was reduced. These results clearly demonstrate that the larger off-cut angles improve the crystalline quality of InN film with reducing the In-droplets due to a higher step surface density on the off-cut angle surface. © 2010 Published by Elsevier Ltd.
คำสำคัญ
Growth, InN, MBE
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