An X-ray photoelectron spectroscopy investigation of redeposition from fluorine-based plasma etch on magnetic recording slider head substrate

Conference proceedings article

ผู้เขียน/บรรณาธิการ

กลุ่มสาขาการวิจัยเชิงกลยุทธ์

ไม่พบข้อมูลที่เกี่ยวข้อง

รายละเอียดสำหรับงานพิมพ์

รายชื่อผู้แต่ง: Limcharoen A., Pakpum C., Limsuwan P.

ผู้เผยแพร่: Elsevier

ปีที่เผยแพร่ (ค.ศ.): 2012

Volume number: 32

หน้าแรก: 1043

หน้าสุดท้าย: 1049

จำนวนหน้า: 7

นอก: 1877-7058

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84879900164&doi=10.1016%2fj.proeng.2012.02.052&partnerID=40&md5=495675cbd4ffe7c7ba7485267c2a1fea

ภาษา: English-Great Britain (EN-GB)

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บทคัดย่อ

Re-deposition is an etched by-product in the Reactive Ion Etching (RIE) process well known the causing dirty on etching work piece. In this work, we aim to investigate the re-deposition of fluorine-based plasma etch on the Al 2O3- TiC substrate. To select the suitable chemical solution for cleaning, it's necessary to know that the chemical bonding of the re-deposition material. Thermodynamic theory is used to predict the potential of re-deposition compounds which should be found in our experiment. The real re-deposition is prepared by the RIE etching system. The morphology of the re-deposition is investigated by scanning electron microscope (SEM). The elemental composition and chemical bonding are characterized by X-ray photoelectron spectroscopy (XPS). Thermodynamic predicts that the re-deposition presented in our experiment should be composed of AlF3(s), TiF 4(s), TiF3(s) and TiF2(s). The result showed XPS could detect the prepared re-deposition contained fluorine 31.2 At%, oxygen 23.7 At%, carbon 23.7 At%, aluminium 16.0 At% and titanium 5.4 At%. The chemical bonding; AlF3, AlF6, CF, CO, C2 and TiO 2 are formed to be the re-deposition material. The in-coincidence between thermodynamic prediction of forming Ti-F compounds versus Ti-O compound as found in the experiment was able to explain via the oxidation state of atoms; the oxidation state of the sputtered Ti atoms is +4 is suitable to have the reaction with sputtered oxygen atoms (from the substrate) that have an oxidation number +2, forming the TiO2 compound. ฉ 2010 Published by Elsevier Ltd.

คำสำคัญ

Fluorine-based plasma, Re-deposition, XPS