Formation of SiC in DLC/a-Si films as characterized by Raman spectroscopy and XPS

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Author list: Srisang C., Asanithi P., Siangchaew K., Pokaipisit A., Limsuwan P.

Publisher: IOP Publishing

Publication year: 2013

Volume number: 417

Issue number: 1

ISSN: 1742-6588

eISSN: 1742-6596

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84875897937&doi=10.1088%2f1742-6596%2f417%2f1%2f012046&partnerID=40&md5=ce81eae1f39bb1e2074f7f3d3f9ca830

Languages: English-Great Britain (EN-GB)

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Abstract

Bilayer DLC/a-Si films was deposited on germanium substrate. a-Si films was initially deposited as a seed layer on the substrate using DC magnetron sputtering. DLC films was then deposited on the a-Si layer via a pulsed filtered cathodic arc (PFCA) system. In situ ellipsometry was used to monitor growth in thickness of a-Si and DLC films, allowing a good control over growth conditions. The thickness of DLC and a-Si layers were 9 nm and 6 nm, respectively. In this work, the interface of a-Si and DLC layers was investigated by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). It was found that the SiC layer was formed at the interface of a-Si and DLC layers.

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