High frequency precision modelling of CMOS-based, -Rx, translinear CCCII+
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Publication Details
Author list: Chansamrong E., Chipipop B., Chaisricharoen R., Sirinaovakul B.
Publisher: Hindawi
Publication year: 2013
Start page: 703
End page: 708
Number of pages: 6
ISBN: 9781467355803
ISSN: 0146-9428
eISSN: 1745-4557
Languages: English-Great Britain (EN-GB)
Abstract
The translinear CMOS-based plus-type second-generation current-controlled conveyor (CCCII+) with negative intrinsic resistance is importance for voltage-mode and current-mode building blocks for analog signal processing. The high frequency model of CMOS-Based, -Rx, translinear CCCII+ is used to approximate the behavior of its performance at high frequency. The behavior at high frequency is essential because simulation result will close to real behavior depends on the accuracy of the model is. Because all of parasitic capacitances and resistances are not considered precisely in the previous work, so in this paper, we propose the analyzing of CMOS-Based, -Rx, translinear CCCII+ to investigate high frequency model including parasitic element. We use the elaborate mathematical modelling to find the expected result that similar to the experimental result. HSPICE simulation program is used to verify the circuit based on the MOSIS IBM's 90 nm RF CMOS BSIM4 level-54 process with ฑ1.2V supply voltages. MATLAB software is used to compute the complex symbolic equations. ฉ 2013 IEEE.
Keywords
CMOS-based, negative intrinsic resistance, plus-type
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