High frequency precision modelling of CMOS-based, -Rx, translinear CCCII-
Conference proceedings article
Authors/Editors
Strategic Research Themes
No matching items found.
Publication Details
Author list: Chipipop B., Chansamrong E., Chaisricharoen R., Sirinaovakul B.
Publisher: Hindawi
Publication year: 2013
Start page: 709
End page: 714
Number of pages: 6
ISBN: 9781467355803
ISSN: 0146-9428
eISSN: 1745-4557
Languages: English-Great Britain (EN-GB)
Abstract
In this paper, the CMOS-based translinear minustype second-generation current-controlled conveyor (CCCII-) with negative intrinsic resistance structure is proposed by Fabre's modelling and high frequency equivalent circuit modelling. We will analyze the characteristic of high frequency equivalent circuit model that similar to the Fabre's model. The accurate simulation leads to the closed results of two models those consider parasitic elements i.e. capacitances and resistances. In addition, we use symbolic equation from current and voltage transfer functions to find simple network topologies consist of capacitance and inductance in the series and parallel network. HSPICE simulation program is used to verify the circuit based on the MOSIS IBM's 90 nm RF CMOS BSIM4 level-54 process with ฑ1.2V supply voltages. MATLAB software is used to compute the complex symbolic equations. ฉ 2013 IEEE.
Keywords
CMOS-based, minus-type, negative intrinsic resistance
ติดต่อสอบถามเพิ่มเติมได้ที่