Effect of n incorporation on growth behavior of InGaAsN/GaAs/Ge multi-layered structure by MOVPE
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Author list: Wanarattikan P., Sanorpim S., Denchitcharoen S., Uesugi K., Kikuchi T., Kuboya S., Onabe K.
Publisher: Trans Tech Publications
Publication year: 2013
Volume number: 802
Start page: 129
End page: 133
Number of pages: 5
ISBN: 9783037858547
ISSN: 1022-6680
eISSN: 1662-8985
Languages: English-Great Britain (EN-GB)
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Abstract
We have investigated an effect of N incorporation on InGaAsN on Ge (001), which is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell, and on its growth behavior. Results obtained from high resolution X-ray diffraction and Raman scattering demonstrated that high quality In0.11Ga0.89As1-yNy films with N (y) contents up to 5% were successfully grown on n-type doped Ge (001) substrate by metalorganic vapor phase epitaxy using low-temperature (500ฐC) GaAs buffer layer. As expectation, the In0.11Ga0.89As0.96N0.04 film is examined to be under lattice-matching condition. Anti-phase domains were observed for the film without N incorporation, which exhibits submicron-size domains oriented along the [110] direction on the grown surface. With increasing N content, the domains become less orientation, and present in a larger domain size. Based on results of transmission electron microscopy, a high density of anti-phase domains was clearly observed at the interface of low-temperature GaAs buffer layer and Ge substrate. On the other hand, it is found to drastically reduce within the N-contained InGaAsN region. Furthermore, the lattice-matched In0.11Ga0.89As0.96N0.04 film is well developed to reduce the density of anti-phase domains. ฉ (2013) Trans Tech Publications, Switzerland.
Keywords
High resolution x-ray diffraction, III-V-nitrides, MOVPE
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