Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

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Author listJantawongrit P., Sanorpim S., Yaguchi H., Orihara M., Limsuwan P.

PublisherInstitute of Physics Publishing

Publication year2015

Volume number36

Issue number8

ISSN1674-4926

eISSN1674-4926

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84940094786&doi=10.1088%2f1674-4926%2f36%2f8%2f083002&partnerID=40&md5=6f8e948636bfcabcb9ab746a818dda36

LanguagesEnglish-Great Britain (EN-GB)


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Abstract

InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ∼5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains. © 2015 Chinese Institute of Electronics.


Keywords

anti-phase domaincrystal polarityRF-MBEthreading dislocation


Last updated on 2023-28-09 at 07:35