Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE
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Author list: Jantawongrit P., Sanorpim S., Yaguchi H., Orihara M., Limsuwan P.
Publisher: Institute of Physics Publishing
Publication year: 2015
Volume number: 36
Issue number: 8
ISSN: 1674-4926
eISSN: 1674-4926
Languages: English-Great Britain (EN-GB)
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Abstract
InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ∼5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains. © 2015 Chinese Institute of Electronics.
Keywords
anti-phase domain, crystal polarity, RF-MBE, threading dislocation