Effect of emitting current ion source on structural, optical and electrical properties of nanostructured ITO thin films by ion-beam assisted evaporation

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Author list: Yosvichit B., Horprathum M., Eiamchai P., Patthanasetakul V., Samransuksamer B., Chindaudom P., Denchitcharoen S.

Publisher: Trans Tech Publications

Publication year: 2014

Volume number: 979

Start page: 263

End page: 266

Number of pages: 4

ISBN: 9783038351450

ISSN: 1022-6680

eISSN: 1662-8985

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84904210870&doi=10.4028%2fwww.scientific.net%2fAMR.979.263&partnerID=40&md5=09a859db463b2bb9b17442b72236eafe

Languages: English-Great Britain (EN-GB)

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Abstract

Transparent conductive oxides (TCOs) with indium tin oxide (ITO) thin films were deposited without substrate heating and post-deposition anneal using ion-beam assisted evaporation technique on glass and silicon substrates. The oxygen ion with emitting current produced using End-Hall ion source for bombardment of growing surface to improve ITO films structure. In this study, we investigate the effect of an ion flux to ITO films in terms of structural, optical and electrical properties. The emitting current can be varied from 0. 5 to 2. 0 A with the oxygen flow rate 7 sccm. The total film thickness and deposition rate are 200 nm and 0. 2 nm/s, respectively. The structural properties of thin films were characterized by X-ray diffraction (XRD) to discover the preferred orientation with phase of crystalline and scanning electron microscopy (SEM) to examine the surface morphology in cross-section view. To determine the transmission spectra of the films, UV-visible spectrometer is introduced. Moreover, the films were also measured to investigate resistivity, carrier concentration, mobility and sheet resistance by Hall-effect measurements and four-point probe. It has been found that the ITO films with lowest electrical resistivity for the emitting current of 1 A about 5. 57×10-4 Ω. cm and slightly increases with increase of the emitting current. The mobility and carrier concentration rapidly decreases with increase the emitting current from 1. 0 A to 2. 0 A. © (2014) Trans Tech Publications, Switzerland.

Keywords

Emitting current, Ion-beam assisted evaporation, Ion-beam bombardment