An analysis of ZnS:Cu phosphor layer thickness influence on electroluminescence device performances

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Author list: Chansri P., Arunrungrusmi S., Yuji T., Mungkung N.

Publisher: Hindawi

Publication year: 2017

Journal: International Journal of Photoenergy (1110-662X)

Volume number: 2017

ISSN: 1110-662X

eISSN: 1687-529X

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85027315609&doi=10.1155%2f2017%2f6752984&partnerID=40&md5=578a25b04c4f0d0f1b405dc46dca051f

Languages: English-Great Britain (EN-GB)

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Abstract

Electroluminescence (EL) device is a new technology; its thickness is within micrometer range which can bend more easily and emit light. However, the thickness of ZnS:Cu phosphor layer may affect the light intensity, so we have analyzed the thickness of ZnS:Cu phosphor layer on EL device. The EL devices consist of ITO:PET/ZnS:Cu phosphor/insulator (BaTiO3)/Ag electrode. The EL devices were fabricated in changing thickness 10 μm, 30 μm, and 50 μm. At 100 V 400 Hz, the luminance of EL devices was 51.22 cd/m2 for thickness 30 μm more than that of 45.78 cd/m2 (thickness: 10 μm) and 42.58 cd/m2 (thickness: 50 μm). However, the peak light intensity was achieved at wavelength of 507 nm which was not influenced by the thickness of the ZnS:Cu phosphor. The use of the ZnS:Cu phosphor layer at thickness 30 μm in the EL device significantly improves the luminescence performance. © 2017 Pakpoom Chansri et al.

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