Quantum oscillation of conductance and negative tunneling magnetoresistance in velocity-modulated graphene spin-valve device

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Publication Details

Author list: Zein H.F., Choopan W., Suvarnaphaet P., Liewrian W.

Publisher: IOP Publishing

Publication year: 2017

Volume number: 901

Issue number: 1

ISSN: 1742-6588

eISSN: 1742-6596

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85034013676&doi=10.1088%2f1742-6596%2f901%2f1%2f012033&partnerID=40&md5=97bca842ad510db6f66fc8bf1d6ee67c

Languages: English-Great Britain (EN-GB)

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Abstract

Mismatch effect of renormalized Fermi velocity of massive Dirac fermions on the spin transport properties and tunneling magnetoresistance in a gapped graphene-based ferromagnetic/velocity barrier/ferromagnetic (FG/VB/FG') junction is investigated. The electrostatic potential created by the applied voltage on the VB region can generate spin-dependent collimation of Dirac fermions. The quantum beating pattern in the spin conductance oscillation are shown as a function of the Fermi energy at low velocity ratio (the Fermi velocity inside the barrier to that outside the barrier). The Fermi-velocity mismatch effect between graphene junction give rises to the oscillating behavior of negative tunneling magnetoresistance at the velocity ratio less than one. ฉ Published under licence by IOP Publishing Ltd.

Keywords

Dirac equation, Magnetic tunnel junction, spin valve, tunneling magnetoresistance, Velocity modulation