Insights into Recombination Processes from Light Intensity–Dependent Open-Circuit Voltages and Ideality Factors in Planar Perovskite Solar Cells
บทความในวารสาร
ผู้เขียน/บรรณาธิการ
กลุ่มสาขาการวิจัยเชิงกลยุทธ์
รายละเอียดสำหรับงานพิมพ์
รายชื่อผู้แต่ง: Thongprong N., Supasai T., Li Y., Tang I.-M., Rujisamphan N.
ผู้เผยแพร่: Wiley-VCH Verlag
ปีที่เผยแพร่ (ค.ศ.): 2020
Volume number: 8
Issue number: 5
นอก: 2194-4288
eISSN: 2194-4296
ภาษา: English-Great Britain (EN-GB)
ดูในเว็บของวิทยาศาสตร์ | ดูบนเว็บไซต์ของสำนักพิมพ์ | บทความในเว็บของวิทยาศาสตร์
บทคัดย่อ
To analyze the dominant recombination, researchers often consider the diode ideality factor (nid), determined from the fitting of a semi-log plot of light intensity–dependent open-circuit voltage (Voc(lnI/I0)) to a linear dependence. This value is called “nid,Voc”. Theoretically, nid is the exponential dependence factor in the recombination rate function of the split of quasi-Fermi levels. This nid is called “nid,C”. Herein, correlations between nid,Voc, nid,C, and the dominant recombination are reconsidered using a validated numerical drift–diffusion model and a diode current analysis in perovskite solar cell devices having accumulations of charged defects near the carrier transporting interfaces. It is found that the interplay between the recombination processes affects the linearity of the Voc(lnI/I0) plots. Devices having a single dominant recombination process exhibit Voc(lnI/I0) plots that appear to be linear, resulting in nid,Voc ≈ nid,C of the dominant recombination. Conversely, bends in the Voc(lnI/I0) curves indicate that different (multiple) recombination mechanisms dominate at different light intensities, so nid,Voc is an effective nid of the total diode current whose value is not consistent with any nid,C values. This work provides more understanding of nid and how to interpret a Voc(lnI/I0) curve more correctly for the insights into recombination mechanisms. © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
คำสำคัญ
carrier recombination, diode currents, drift–diffusion modeling, ideality factors
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