THE INFLUENCE OF SILICON ELEMENT-ADDED DLC FILM ON Ti-6Al-4V

บทความในวารสาร


ผู้เขียน/บรรณาธิการ


กลุ่มสาขาการวิจัยเชิงกลยุทธ์


รายละเอียดสำหรับงานพิมพ์

รายชื่อผู้แต่งNutthanun Moolsradoo, Shuichi Watanabe

ผู้เผยแพร่Suranaree University of Technology

ปีที่เผยแพร่ (ค.ศ.)2023

Volume number30

Issue number2

หน้าแรก010210

นอก0858-849X

eISSN2587-0009

URLhttps://ird.sut.ac.th/journal/sjst/#/los/manuscript/25411

ภาษาEnglisch-Trinidad (EN-TT)


บทคัดย่อ

Silicon added diamond-like carbon films fabricated from C2H2:TMS mixture were used to study the influence of silicon content on the deposition and tribological properties of films prepared on Ti-6Al-4V substrate by using plasma-based ion implantation (PBII). The structure of the film was analyzed by Raman spectroscopy. Hardness and elastic modulus of the film were measured by nano-indentation hardness tester. Tribological propertiesof the film were performed by using ball-on-disk friction tester. The results indicate that with the increasing silicon content in the pure DLC film, the friction coefficient increases. The hardness and elastic modulus of Si-DLC film can increase to a value of up to 31.1 GPa and 200.1 GPa with a silicon content of 13.1 at.%. This is because the greater C content. The Si-DLC films with Si content of 13.1 at.% (C:Si/1:2) and 14.3 at.% (C:Si/1:6) shows a low friction coefficient of 0.2, which is considerable improvement in the tribological properties. This is due to the high hardness and elastic modulus.


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อัพเดทล่าสุด 2023-28-06 ถึง 11:57