THE INFLUENCE OF SILICON ELEMENT-ADDED DLC FILM ON Ti-6Al-4V
Journal article
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Publication Details
Author list: Nutthanun Moolsradoo, Shuichi Watanabe
Publisher: Suranaree University of Technology
Publication year: 2023
Volume number: 30
Issue number: 2
Start page: 010210
ISSN: 0858-849X
eISSN: 2587-0009
URL: https://ird.sut.ac.th/journal/sjst/#/los/manuscript/25411
Languages: English-Trinidad (EN-TT)
Abstract
Silicon added diamond-like carbon films fabricated from C2H2:TMS mixture were used to study the influence of silicon content on the deposition and tribological properties of films prepared on Ti-6Al-4V substrate by using plasma-based ion implantation (PBII). The structure of the film was analyzed by Raman spectroscopy. Hardness and elastic modulus of the film were measured by nano-indentation hardness tester. Tribological propertiesof the film were performed by using ball-on-disk friction tester. The results indicate that with the increasing silicon content in the pure DLC film, the friction coefficient increases. The hardness and elastic modulus of Si-DLC film can increase to a value of up to 31.1 GPa and 200.1 GPa with a silicon content of 13.1 at.%. This is because the greater C content. The Si-DLC films with Si content of 13.1 at.% (C:Si/1:2) and 14.3 at.% (C:Si/1:6) shows a low friction coefficient of 0.2, which is considerable improvement in the tribological properties. This is due to the high hardness and elastic modulus.
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