Development of Ar + O2 + Zn Powder Mixing Gas at Low-pressure High-frequency Plasma Chemical Vapor
Deposition Process System

Conference proceedings article


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Publication Details

Author listW. Poonthong, N. Mungkung, N. Kasayapanand, T. Yuji, T. Bouno, T. Haraguchi

Publication year2023

Start page115

End page116

Number of pages2

LanguagesEnglish-Great Britain (EN-GB)


Abstract

The chemical vapor deposition has been used to fabricate zinc oxide thin films on silicon substrates under argon + oxygen + mixing zinc powder gas on times deposition from 10 - 30 min. There have been found that the obtained samples presented the difference adhesion of thickness zinc oxide films on silicon substrates affecting to the electrical properties.


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Last updated on 2024-16-02 at 23:05