Characterization of anatase and rutile TiO2 thin films deposited by two cathodes sputtering system

Conference proceedings article

ผู้เขียน/บรรณาธิการ

กลุ่มสาขาการวิจัยเชิงกลยุทธ์

ไม่พบข้อมูลที่เกี่ยวข้อง

รายละเอียดสำหรับงานพิมพ์

รายชื่อผู้แต่ง: Witit-Anun N., Rakkwamsuk P., Limsuwan P.

ผู้เผยแพร่: Trans Tech Publications

ปีที่เผยแพร่ (ค.ศ.): 2008

Volume number: 55-57

หน้าแรก: 469

หน้าสุดท้าย: 472

จำนวนหน้า: 4

ISBN: 9780878493562

นอก: 1022-6680

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-62949164654&partnerID=40&md5=e97301058b5969fa8d8bbea78fe7d6f8

ภาษา: English-Great Britain (EN-GB)

บทคัดย่อ

Titanium dioxide, TiO2, thin films were deposited on unheated Si (100) wafers by two cathodes sputtering system. However, during the deposition of TiO2 films only one cathode was used. A pure metallic titanium was used as a sputtering target. Argon and oxygen were used as sputtered gas and reactive gas, respectively. TiO2 films were deposited at the argon and oxygen ratio of 1:4 and a total pressure of 5.0 ื 10-3 mbar. The distance between the target and the center point of substrate was 12 cm. For each deposition of TiO2 films, the position of substrate was changed every 2 cm on the radial position of the cathode. The deposition time for each deposition was 60 min. The films were characterized by X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). The XRD results and TEM images show that the crystalline rutile TiO2 films can be successfully deposited on an unheated substrate. ฉ 2008 Trans Tech Publications, Switzerland.

คำสำคัญ

Anatase, TiO2 films