Characterization of anatase and rutile TiO2 thin films deposited by two cathodes sputtering system
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Publication Details
Author list: Witit-Anun N., Rakkwamsuk P., Limsuwan P.
Publisher: Trans Tech Publications
Publication year: 2008
Volume number: 55-57
Start page: 469
End page: 472
Number of pages: 4
ISBN: 9780878493562
ISSN: 1022-6680
Languages: English-Great Britain (EN-GB)
Abstract
Titanium dioxide, TiO2, thin films were deposited on unheated Si (100) wafers by two cathodes sputtering system. However, during the deposition of TiO2 films only one cathode was used. A pure metallic titanium was used as a sputtering target. Argon and oxygen were used as sputtered gas and reactive gas, respectively. TiO2 films were deposited at the argon and oxygen ratio of 1:4 and a total pressure of 5.0 ื 10-3 mbar. The distance between the target and the center point of substrate was 12 cm. For each deposition of TiO2 films, the position of substrate was changed every 2 cm on the radial position of the cathode. The deposition time for each deposition was 60 min. The films were characterized by X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). The XRD results and TEM images show that the crystalline rutile TiO2 films can be successfully deposited on an unheated substrate. ฉ 2008 Trans Tech Publications, Switzerland.
Keywords
Anatase, TiO2 films
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