Influence of annealing temperature on the properties of nanostructure ITO thin films prepared by ion-assisted electron beam evaporation

Conference proceedings article

ผู้เขียน/บรรณาธิการ

กลุ่มสาขาการวิจัยเชิงกลยุทธ์

ไม่พบข้อมูลที่เกี่ยวข้อง

รายละเอียดสำหรับงานพิมพ์

รายชื่อผู้แต่ง: Pokaipisit A., Horprathum M., Limsuwan P.

ผู้เผยแพร่: Trans Tech Publications

ปีที่เผยแพร่ (ค.ศ.): 2008

Volume number: 55-57

หน้าแรก: 373

หน้าสุดท้าย: 376

จำนวนหน้า: 4

ISBN: 9780878493562

นอก: 1022-6680

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-62949120750&partnerID=40&md5=163bb0a9c18ac6dcfc0c58b21db90b18

ภาษา: English-Great Britain (EN-GB)

บทคัดย่อ

The influence of annealing temperature on the optical and electrical properties, nanostructure and surface morphology of ITO thin films prepared by ion-assisted electron beam evaporation on the glass substrates has been studied. The resistivity and transmittance spectra were measured by a four-point probe method and spectrophotometer, respectively. The nanostructure and surface morphology were examined by X-ray diffractometer and atomic force microscopy. The results show that the ITO thin films with a thickness of 200 nm is amorphous. The crystallite size and optical band gap of ITO thin films increased after annealing in vacuum at different temperatures from 200 to 350 °C. At 350 °C, high quality crystalline thin films with a crystallite size of about 30 nm were obtained. The average optical transmittance was 84% in the visible range (400-700 nm) and the resistivity of 1.34 × 10-4 Ω-cm was obtained at a temperature of 350 °C. © 2008 Trans Tech Publications, Switzerland.

คำสำคัญ

Annealing temperature