Influence of annealing temperature on the properties of nanostructure ITO thin films prepared by ion-assisted electron beam evaporation
Conference proceedings article
Authors/Editors
Strategic Research Themes
No matching items found.
Publication Details
Author list: Pokaipisit A., Horprathum M., Limsuwan P.
Publisher: Trans Tech Publications
Publication year: 2008
Volume number: 55-57
Start page: 373
End page: 376
Number of pages: 4
ISBN: 9780878493562
ISSN: 1022-6680
Languages: English-Great Britain (EN-GB)
Abstract
The influence of annealing temperature on the optical and electrical properties, nanostructure and surface morphology of ITO thin films prepared by ion-assisted electron beam evaporation on the glass substrates has been studied. The resistivity and transmittance spectra were measured by a four-point probe method and spectrophotometer, respectively. The nanostructure and surface morphology were examined by X-ray diffractometer and atomic force microscopy. The results show that the ITO thin films with a thickness of 200 nm is amorphous. The crystallite size and optical band gap of ITO thin films increased after annealing in vacuum at different temperatures from 200 to 350 °C. At 350 °C, high quality crystalline thin films with a crystallite size of about 30 nm were obtained. The average optical transmittance was 84% in the visible range (400-700 nm) and the resistivity of 1.34 × 10-4 Ω-cm was obtained at a temperature of 350 °C. © 2008 Trans Tech Publications, Switzerland.
Keywords
Annealing temperature
Contact Information