Temperature dependence of optical constants of silver film studied by in situ spectroscopic ellipsometry

Conference proceedings article


ผู้เขียน/บรรณาธิการ


กลุ่มสาขาการวิจัยเชิงกลยุทธ์

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รายละเอียดสำหรับงานพิมพ์

รายชื่อผู้แต่งRojebuathong S., Chindaudom P., Luangtip W., Horphatum M., Eiamchai P., Patthanasetthakul V., Limsuwan P.

ผู้เผยแพร่Trans Tech Publications

ปีที่เผยแพร่ (ค.ศ.)2008

Volume number55-57

หน้าแรก445

หน้าสุดท้าย448

จำนวนหน้า4

ISBN9780878493562

นอก1022-6680

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-62949246859&partnerID=40&md5=b679da781b9d2960c149635e11992aed

ภาษาEnglish-Great Britain (EN-GB)


บทคัดย่อ

A silver film was deposited on silicon wafer by DC unbalance magnetron sputtering system. The temperature dependence of the silver film was investigated. The spectroscopic ellipsometry (SE) with the heating of sample stage (HTC100) was employed for the in situ SE measurement under annealing cycles of the sample from room temperature to 300°C in dry nitrogen gas. The results show that the pseudo dielectric constants (<ε1>, <ε2>) of the sample varied with an annealing temperature. The real part of pseudo dielectric constant (<ε1>) of annealed Ag film was slightly changed and the imaginary part (<ε2>) was strongly increased at a photon energy below the optical band gap (3.5-4.5 eV). Furthermore, the pseudo dielectric constant of imaginary part at low energy region was changed due to the enhancement of crystallinity of Ag film at 300°C. All measured SE spectra were fitted by Drude-Lorentz optical model, the scattering time and resistivity were obtained. © 2008 Trans Tech Publications, Switzerland.


คำสำคัญ

In situ spectroscopic ellipsometryPseudo dielectric constantsSilver film


อัพเดทล่าสุด 2022-06-01 ถึง 15:29