Temperature dependence of optical constants of silver film studied by in situ spectroscopic ellipsometry

Conference proceedings article

Authors/Editors

PICHET LIMSUWAN

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Publication Details

Author list: Rojebuathong S., Chindaudom P., Luangtip W., Horphatum M., Eiamchai P., Patthanasetthakul V., Limsuwan P.

Publisher: Trans Tech Publications

Publication year: 2008

Volume number: 55-57

Start page: 445

End page: 448

Number of pages: 4

ISBN: 9780878493562

ISSN: 1022-6680

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-62949246859&partnerID=40&md5=b679da781b9d2960c149635e11992aed

Languages: English-Great Britain (EN-GB)

Abstract

A silver film was deposited on silicon wafer by DC unbalance magnetron sputtering system. The temperature dependence of the silver film was investigated. The spectroscopic ellipsometry (SE) with the heating of sample stage (HTC100) was employed for the in situ SE measurement under annealing cycles of the sample from room temperature to 300°C in dry nitrogen gas. The results show that the pseudo dielectric constants (<ε1>, <ε2>) of the sample varied with an annealing temperature. The real part of pseudo dielectric constant (<ε1>) of annealed Ag film was slightly changed and the imaginary part (<ε2>) was strongly increased at a photon energy below the optical band gap (3.5-4.5 eV). Furthermore, the pseudo dielectric constant of imaginary part at low energy region was changed due to the enhancement of crystallinity of Ag film at 300°C. All measured SE spectra were fitted by Drude-Lorentz optical model, the scattering time and resistivity were obtained. © 2008 Trans Tech Publications, Switzerland.

Keywords

In situ spectroscopic ellipsometry, Pseudo dielectric constants, Silver film