Influence of oxygen flow rate on properties of indium tin oxide thin films prepared by ion-assisted electron beam evaporation
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Author list: Pokaipisit A., Horprathum M., Limsuwan P.
Publisher: Prince of Songkla University
Publication year: 2009
Journal: Songklanakarin Journal of Science and Technology (SJST) (0125-3395)
Volume number: 31
Issue number: 5
Start page: 577
End page: 581
Number of pages: 5
ISSN: 0125-3395
Languages: English-Great Britain (EN-GB)
Abstract
Indium tin oxide (ITO) thin films with various oxygen flow rates were deposited onto glass substrates by ion-assisted electron beam evaporation. All other deposition parameters were kept constant. The electrical and optical properties of the ITO thin films have been investigated as a function of oxygen flow rate. Optical transmittance and optical band gap energy were measured by spectrophotometer. Sheet resistance was measured by four-point probe method. It has been found that an oxygen flow rate at 12 sccm was suitable for improving the properties of ITO thin films. The resistivity and optical transmittance of ITO thin films were 7.2×10-4 Ω-cm and 84%, respectively. The optical band gap was 4.19 eV.
Keywords
Ion-assisted deposition
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