Low temperature synthesized indium tin oxide nanowires
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Publication Details
Author list: Jutarosaga T., Smith S.M., Liang Y.
Publisher: Prince of Songkla University
Publication year: 2009
Journal: Songklanakarin Journal of Science and Technology (SJST) (0125-3395)
Volume number: 31
Issue number: 1
Start page: 111
End page: 115
Number of pages: 5
ISSN: 0125-3395
Languages: English-Great Britain (EN-GB)
Abstract
Directional indium tin oxide (ITO) nanowires were successfully grown on SiO2/Si at temperatures ranging from approximately 640oC to 800oC and pressure of about 300 mtorr using SnO and In powders. The results show that growth temperature strongly affects the morphology and composition of ITO nanostructures. The X-ray diffraction indicates the presence of both cubic In2O3 and tetragonal SnO2 phases in ITO nanowires. Energy dispersive X-ray spectroscopy shows that the atomic ratio of Sn/In decreases with the increase of growth temperature. The observed particles at the tip of the nanowires indicate that the growth of these nanowires is facilitated by the catalyst-assisted vapor-liquid-solid growth mechanism.
Keywords
Nanostructure materials, Vapor-liquid-solid growth mechanism
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