Vacuum and air annealing effects on properties of indium tin oxide films prepared by ion-assisted electron beam evaporation
Journal article
Authors/Editors
Strategic Research Themes
No matching items found.
Publication Details
Author list: Pokaipisit A., Horprathum M., Limsuwan P.
Publisher: IOP Publishing
Publication year: 2008
Journal: Japanese Journal of Applied Physics (0021-4922)
Volume number: 47
Issue number: 6 PART 1
Start page: 4692
End page: 4695
Number of pages: 4
ISSN: 0021-4922
eISSN: 1347-4065
Languages: English-Great Britain (EN-GB)
View in Web of Science | View on publisher site | View citing articles in Web of Science
Abstract
Indium tin oxide (ITO) films were deposited on glass substrates by ion-assisted electron beam evaporation, followed by annealing in vacuum and air at different temperatures from 200 to 350 °C with an interval of 50 °C for 1 h. The deposited films were analyzed by a four-point probe method, Hall effect measurement, an X-ray diffraction technique, spectrophotometry, and atomic force microscopy. Results show that the electrical resistivity of ITO films depends on annealing temperature. Its lowest value of 1.07 × 10 -4 Ωcm is obtained at an annealing temperature of 350 °C in vacuum. The optical transmittance of ITO films with a thickness of 500 nm for annealing in air is higher than that in vacuum. The optical band gap and grain size increase with increasing annealing temperature. ©2008 The Japan Society of Applied Physics.
Keywords
Electron beam evaporation
Contact Information