Surface modification of silicon wafer by low-pressure high-frequency plasma chemical vapor deposition method

Conference proceedings article

Authors/Editors

NARONG MUNGKUNG

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Publication Details

Author list: Kataoka H., Mungkung N., Yuji T., Kawano M., Kiyota Y., Uesugi D., Nakabayashi K., Suzaki Y., Shibata H., Kashihara N., Sakai K., Bouno T., Akatsuka H.

Publication year: 2010

Start page: 505

End page: 508

Number of pages: 4

ISBN: 9781424483655

ISSN: 1093-2941

eISSN: 1093-2941

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650458099&doi=10.1109%2fDEIV.2010.5625758&partnerID=40&md5=51e4ab96e78480d005db1e3c437ddd21

Languages: English-Great Britain (EN-GB)

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Abstract

The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray photoelectron spectroscopy (XPS) and contact angle measuring gauge. ฉ2010 IEEE.

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