Characterization of SiC in DLC/a-Si films prepared by pulsed filtered cathodic arc using Raman spectroscopy and XPS
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Author list: Srisang C., Asanithi P., Siangchaew K., Pokaipisit A., Limsuwan P.
Publisher: Elsevier
Publication year: 2012
Journal: Applied Surface Science (0169-4332)
Volume number: 258
Issue number: 15
Start page: 5605
End page: 5609
Number of pages: 5
ISSN: 0169-4332
eISSN: 1873-5584
Languages: English-Great Britain (EN-GB)
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Abstract
DLC/a-Si films were deposited on germanium substrates. a-Si film was initially deposited as a seed layer on the substrate using DC magnetron sputtering. DLC film was then deposited on the a-Si layer via a pulsed filtered cathodic arc (PFCA) system. In situ ellipsometry was used to monitor the thicknesses of the growth films, allowing a precise control over the a-Si and DLC thicknesses of 6 and 9 nm, respectively. It was found that carbon atoms implanting on a-Si layer act not only as a carbon source for DLC formation, but also as a source for SiC formation. The Raman peak positions at 796 cm -1 and 972 cm -1 corresponded to the LO and TO phonon modes of SiC, respectively, were observed. The results were also confirmed using TEM, XPS binding energy and XPS depth profile analysis. ฉ 2012 Elsevier B.V. All rights reserved.
Keywords
Pulsed filtered cathodic arc, Silicon carbide
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