Trimming lithography part II: An effect of trimming distance to the sub-resolution pattern quality

Conference proceedings article

Authors/Editors

Strategic Research Themes

No matching items found.

Publication Details

Author list: Sriklat A., Atthi N., Jeamsaksiri W., Hruanun C., Poyai A., Silapunt R.

Publisher: Hindawi

Publication year: 2011

Start page: 46

End page: 49

Number of pages: 4

ISBN: 9781457704246

ISSN: 0146-9428

eISSN: 1745-4557

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-79961236485&doi=10.1109%2fECTICON.2011.5947767&partnerID=40&md5=8d81d294b1351a835711b30abcaa8601

Languages: English-Great Britain (EN-GB)

View on publisher site

Abstract

Trimming lithography acts as one of the candidates for next generation lithography. The pattern size can be scaled by adjusting the trim distance that is much bigger than an original design linewidth. The photoresist feature size can be scaled down to 0.18 μm with the 0.9 μm mask and the 0.5 μm resolution exposure tool. However, a pattern density of the line/space pattern is lower than that of other patterning techniques. Different pattern qualities between dense and isolated patterns are explained by a diffraction of the waveform transmitted through the mask slit. © 2011 IEEE.

Keywords

Moore's law, Next generation lithography, Pattern shrinkage, Sub-resolution patterning, Trimming lithography