Surface modification of Si wafer by low-pressure high-frequency plasma chemical vapor deposition method
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Author list: Yuji T., Mungkung N., Kiyota Y., Uesugi D., Kawano M., Nakabayashi K., Kataoka H., Suzaki Y., Kashihara N., Akatsuka H.
Publisher: Institute of Electrical and Electronics Engineers
Publication year: 2011
Volume number: 39
Issue number: 6 PART 1
Start page: 1427
End page: 1431
Number of pages: 5
ISSN: 0093-3813
eISSN: 1939-9375
Languages: English-Great Britain (EN-GB)
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Abstract
In recent years, a flexible type of solar cell that can maintain various shape changes and that is applicable to virtually all products has attracted global attention. In the present research, we describe equipment for the production of thin-film material for flexible type solar cells that uses a high-frequency plasma chemical vapor deposition (CVD) method. This equipment is now at the development stage, and in order to clarify the cardinal trait of the plasma, we performed a plasma treatment on the surface of a Si wafer. Using X-ray photoelectron spectroscopy and contact angle meter measurements, we identified one index that clarifies the simple cardinal trait of plasma CVD. ฉ 2011 IEEE.
Keywords
Argon + oxygen mixture gas, MirroTron sputtering method, Poly (ethylene naphthalate) film, Solar Cell, thin films
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