Raman spectroscopy of DLC/a-Si bilayer film prepared by pulsed filtered cathodic arc
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Author list: Srisang C., Asanithi P., Siangchaew K., Limsuwan S., Pokaipisit A., Limsuwan P.
Publisher: Hindawi
Publication year: 2012
Journal: Journal of Nanomaterials (1687-4110)
Volume number: 2012
ISSN: 1687-4110
eISSN: 1687-4129
Languages: English-Great Britain (EN-GB)
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Abstract
DLC/a-Si bilayer film was deposited on germanium substrate. The a-Si layer, a seed layer, was firstly deposited on the substrate using DC magnetron sputtering and DLC layer was then deposited on the a-Si layer using pulsed filtered cathodic arc method. The bilayer films were deposited with different DLC/a-Si thickness ratios, including 2/2, 2/6, 4/4, 6/2, and 9/6. The effect of DLC/a-Si thickness ratios on the sp3 content of DLC was analyzed by Raman spectroscopy. The results show that a-Si layer has no effect on the structure of DLC film. Furthermore, the upper shift in G wavenumber and the decrease in I D / I G inform that sp3 content of the film is directly proportional to DLC thickness. The plot modified from the three-stage model informed that the structural characteristics of DLC/a-Si bilayer films are located close to the tetrahedral amorphous carbon. This information may be important for analyzing and developing bilayer protective films for future hard disk drive. ฉ 2012 C. Srisang et al.
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