Effect of N 2 flow rate on structure and morphology of (Ti,Cr)N thin films deposited by unbalanced magnetron co-sputtering
Conference proceedings article
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Publication Details
Author list: Paksunchai C., Denchitcharoen S., Chaiyakun S., Limsuwan P.
Publisher: Trans Tech Publications
Publication year: 2012
Volume number: 488-489
Start page: 432
End page: 436
Number of pages: 5
ISBN: 9783037853825
ISSN: 1022-6680
eISSN: 1662-8985
Languages: English-Great Britain (EN-GB)
Abstract
The (Ti,Cr)N thin films were deposited with various N 2 flow rates on silicon wafers by reactive unbalanced magnetron co-sputtering without heating and biasing substrates. The effects of N 2 flow rate on the structure and morphologies of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and energy dispersive x-ray spectroscopy (EDS). The results revealed that the (Ti,Cr)N thin films formed solid solutions with the fcc structure. The crystallite sizes calculated from Scherrer formula are about 13 nm. The root-mean-square roughness (R rms) and the thickness (T th) of the films were slightly decreased with the increase in N 2 flow rate. The cross-sectional morphology showed columnar structure corresponding to zone 2. In addition, the N atomic concentration was also increased with the increase in N 2 flow rate. ฉ (2012) Trans Tech Publications.
Keywords
morphology, Structure, (Ti; Cr)N, Unbalanced magnetron co-sputtering