Effect of N 2 flow rate on structure and morphology of (Ti,Cr)N thin films deposited by unbalanced magnetron co-sputtering

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Author listPaksunchai C., Denchitcharoen S., Chaiyakun S., Limsuwan P.

PublisherTrans Tech Publications

Publication year2012

Volume number488-489

Start page432

End page436

Number of pages5

ISBN9783037853825

ISSN1022-6680

eISSN1662-8985

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84859096650&doi=10.4028%2fwww.scientific.net%2fAMR.488-489.432&partnerID=40&md5=2a7acf688d9f650c2716d733ca1fa16d

LanguagesEnglish-Great Britain (EN-GB)


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Abstract

The (Ti,Cr)N thin films were deposited with various N 2 flow rates on silicon wafers by reactive unbalanced magnetron co-sputtering without heating and biasing substrates. The effects of N 2 flow rate on the structure and morphologies of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and energy dispersive x-ray spectroscopy (EDS). The results revealed that the (Ti,Cr)N thin films formed solid solutions with the fcc structure. The crystallite sizes calculated from Scherrer formula are about 13 nm. The root-mean-square roughness (R rms) and the thickness (T th) of the films were slightly decreased with the increase in N 2 flow rate. The cross-sectional morphology showed columnar structure corresponding to zone 2. In addition, the N atomic concentration was also increased with the increase in N 2 flow rate. ฉ (2012) Trans Tech Publications.


Keywords

morphologyStructure(Ti; Cr)NUnbalanced magnetron co-sputtering


Last updated on 2023-26-09 at 07:35