Fabrication of thin nanoporous alumina templates on semiconductor substrates
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Publication Details
Author list: Denchitcharoen S., Limsuwan P.
Publication year: 2013
Journal: Chiang Mai Journal of Science (0125-2526)
Volume number: 40
Issue number: 6 SPEC. ISSUE 2
Start page: 947
End page: 956
Number of pages: 10
ISSN: 0125-2526
Languages: English-Great Britain (EN-GB)
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Abstract
In this study, thin nanoporous alumina templates were fabricated from provided pure thin aluminum films deposited on GaN surface by electron beam evaporation after growing GaN on Sapphire substrates by metal organic chemical vapor deposition (MOCVD). The aluminum films were anodized in electrochemical system with the solution of oxalic acid (H2C2O4). The nanoporous alumina template was gradually formed on the substrate with the growth rates of between 36 and 39 nm/min. To investigate the template, field emission scanning electron microscopy (FESEM) was introduced. The structure and the cell size were investigated by transmission electron microscopy (TEM). It was found that the pore diameter and vertical length were about 42 nm and 400 nm, respectively. Moreover, the thicknesses of the sidewall and the barrier layer at the bottom of alumina nanopores are similar about 26 nm.
Keywords
Fesem, GaN/sapphire, Nanoporous alumina, Tem, Thin aluminum film
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