Critical thickness of diamond-like carbon study using X-ray photoelectron spectroscopy depth profiling

Conference proceedings article

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PICHET LIMSUWAN

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Publication Details

Author list: Khamnaulthong N., Siangchaew K., Limsuwan P.

Publication year: 2013

Start page: 122

End page: 123

Number of pages: 2

ISBN: 9781467348416

ISSN: 0891-7736

eISSN: 0891-7736

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874768252&doi=10.1109%2fINEC.2013.6465973&partnerID=40&md5=77bb9cf0fd251bd735b4b4c8427b47e4

Languages: English-Great Britain (EN-GB)

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Abstract

A bi-layer stack of ion-beam sputtered Si-Si3N4 and tetrahedral amorphous diamond-like carbon made by filtered cathodic arc thin films were grown and heated to 200 ฐC at varying time to study the protective capability of diamond-like carbon film in preventing oxidation of underlying material. Depth profiling of such film by X-ray photoelectron spectroscopy showed that tetrahedral amorphous diamond-like carbon can slow down oxidation and with 1.0 nm thickness film can prevent Si-Si3N 4 film from oxidizing when heated up to 200 ฐC. ฉ 2013 IEEE.

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