High frequency precision modelling of CMOS-based translinear CCCII-

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Author list: Meechuea N., Chipipop B., Chaisricharoen R., Sirinaovakul B.

Publisher: Hindawi

Publication year: 2013

Start page: 697

End page: 702

Number of pages: 6

ISBN: 9781467355803

ISSN: 0146-9428

eISSN: 1745-4557

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84891112157&doi=10.1109%2fISCIT.2013.6645964&partnerID=40&md5=3f2010cf40d6b958aa266b00b0062539

Languages: English-Great Britain (EN-GB)

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Abstract

Recently, a minus-type second-generation current-controlled conveyer (CCCII-) was introduced. The method implementing used CMOS-based technology. Some parasitic capacitances and resistances were ignored in the previous models. This paper presents the high frequency modelling that uses MOSFET equivalent circuit with all parasitic capacitances. This includes the investigating high frequency characteristics of translinear CCCII-. The symbolic mathematical analysis technique via MATLAB program is used to find transfer function for comparing of two modelling; Fabre's outside-in modelling and equivalent circuit modelling. Implementing CMOS CCCII- based on the MOSIS IBM 90nm RF CMOS BSIM4 level-54 process with HSPICE simulations is used under ฑ1.2V supply voltages. ฉ 2013 IEEE.

Keywords

CCCII, CMOS, high frequency modelling, minus-type, translinear