Thermally stimulated luminescence in Ce-doped yttrium oxyorthosilicate

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Author list: Mihokova E., Vávrů K., Horodyský P., Chewpraditkul W., Jarý V., Nikl M.

Publisher: Institute of Electrical and Electronics Engineers

Publication year: 2012

Journal: IEEE Transactions on Nuclear Science (0018-9499)

Volume number: 59

Issue number: 5 PART 2

Start page: 2085

End page: 2088

Number of pages: 4

ISSN: 0018-9499

eISSN: 1558-1578

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84867574700&doi=10.1109%2fTNS.2012.2190521&partnerID=40&md5=6af807a8f05c24610ca1d85649f75d35

Languages: English-Great Britain (EN-GB)

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Abstract

We analyze thermally stimulated luminescence (TSL) above room temperature in Ce-doped Y 2 SiO 5 oxyorthosilicate single crystal. We perform detailed TSL glow peak analysis based on the initial rise technique to evaluate trap depths and other characteristics associated with TSL peaks. The tunneling process previously proposed to be at work in recombination mechanism of Ce-doped lutetium oxyothosilicate was not confirmed in presently studied isostructural yttrium silicate. The charge carrier transfer between traps and Ce recombination centers is rather accomplished via conduction band. ฉ 2012 IEEE.

Keywords

thermoluminescence