Stress induced in Al2O3 films as deposited onto Al2O3TiC substrate by RF diode sputtering

Conference proceedings article

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Publication Details

Author list: Panitchakan H., Limsuwan P.

Publisher: Trans Tech Publications

Publication year: 2013

Volume number: 622

Start page: 716

End page: 719

Number of pages: 4

ISBN: 9783037855638

ISSN: 1022-6680

eISSN: 1662-8985

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84872705809&doi=10.4028%2fwww.scientific.net%2fAMR.622-623.716&partnerID=40&md5=857a83197064f68652360339f59afc8d

Languages: English-Great Britain (EN-GB)

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Abstract

Al2O3 films were deposited onto Al2O3-TiC substrates by RF diode sputtering. The Al2O3 films were deposited at various substrate bias voltages from -80 to -180 V, sputtering powers from to 8 kW and operating pressures from 20 to 30 mTorr. The stress induced in Al2O3 films was measured. The results show that the stress induced in all prepared Al2O3 films is tensile stress. The stress slightly increased with increasing substrate bias voltage whereas it increased linearly with increasing operating pressure. However, the stress was almost constant as the sputtering was increased from 5 to 8 kW and significantly decreased as the sputtering power was decreased below kW. ฉ (2013) Trans Tech Publications, Switzerland.

Keywords

Stress, Stress in the film