Electrical properties of bi-layered nanostructured au/indium tin oxide thin films
Journal article
Authors/Editors
Strategic Research Themes
No matching items found.
Publication Details
Author list: Jutarosaga T., Suapadkron P., Tuayjareon R., Luangchaisri C., Dumrongrattana S.
Publication year: 2014
Journal: Kasetsart Journal - Natural Science (0075-5192)
Volume number: 48
Issue number: 5
Start page: 815
End page: 822
Number of pages: 8
ISSN: 0075-5192
Languages: English-Great Britain (EN-GB)
Abstract
Au thin films were deposited on 150-nm thick indium tin oxide (ITO)/glass using a simple direct current sputtering technique. The Au thickness was varied from approximately 8 nm to 34 nm. Asdeposited bi-layered Au/ITO thin films were then characterized using a four-point probe technique and Hall measurement to identify their electrical properties. The results showed that there was a substantial contribution from the Au films on the electrical conductivity of the bi-layered material, even when a discontinuous Au nanostructure was observed on the ITO films. A simple circuit model was developed to identify the electrical behavior of this bi-layered material. The increase in the carrier concentration and the reduction in carrier mobility was possibly a result of the interfaces between the Au islands and the ITO film. ฉ 2014 Kasetsart J. (Nat. Sci.) All rights received.
Keywords
Bi-layered thin films, Electrical resistivity, Four-point probe, Metallic thin films
Contact Information