The five parameter grain boundary character distribution of polycrystalline silicon
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Author list: Ratanaphan S., Yoon Y., Rohrer G.S.
Publisher: Springer
Publication year: 2014
Journal: Journal of Materials Science (0022-2461)
Volume number: 49
Issue number: 14
Start page: 4938
End page: 4945
Number of pages: 8
ISSN: 0022-2461
eISSN: 1573-4803
Languages: English-Great Britain (EN-GB)
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Abstract
The purpose of this paper is to describe the five-parameter grain boundary character distribution (GBCD) of polycrystalline silicon and compare it to distributions measured in metals and ceramics. The GBCD was determined from the stereological analysis of electron backscatter diffraction maps. The distribution of grain boundary disorientations is non-random and has peaks at 36ฐ, 39ฐ, 45ฐ, 51ฐ, and 60ฐ. The axis-angle distribution reveals that most of the grain boundaries have misorientations around the [111], [110], and [100] axes. The most common grain boundary type (30 % number fraction) has a 60ฐ misorientation around [111] and of these boundaries, the majority are twist boundaries. For other common boundaries, symmetric tilt configurations are preferred. The grain boundary character distribution of Si is distinct from those previously observed for metals and ceramics. The measured grain boundary populations are inversely correlated to calculated grain boundary energies available in the literature. ฉ 2014 Springer Science+Business Media New York.
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