Intrinsic light yield and light loss coefficient of Bi4Ge 3O12 single crystals

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Publication Details

Author list: Yawai N., Chewpraditkul W., Wanarak C., Nikl M., Ratanatongchai W.

Publisher: Elsevier

Publication year: 2014

Volume number: 36

Issue number: 12

Start page: 2030

End page: 2033

Number of pages: 4

ISSN: 0925-3467

eISSN: 1873-1252

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84892377651&doi=10.1016%2fj.optmat.2013.12.034&partnerID=40&md5=1d7f733ffc5e2d5da630ac97b2ab9ed1

Languages: English-Great Britain (EN-GB)

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Abstract

In this paper we present the scintillation properties of polished Bi 4Ge3O12 (BGO) crystals grown by the Bridgman method. The light yield (LY) and energy resolution were measured using XP5200B photomultiplier. At 662 keV γ-rays, high LY of 9680 photons/MeV and good energy resolution of 8.6% were obtained for a 5 × 5 × 1 mm 3 BGO sample. The intrinsic LY and light loss coefficient were evaluated. The photofraction in pulse height spectrum of 662 keV γ-rays and the mass attenuation coefficient at 59.5 and 662 keV γ-rays were also determined and compared with the theoretical ones calculated using the WinXCom program. © 2014 Elsevier B.V. All rights reserved.

Keywords

Light yield, Photofraction