Development of low-pressure high-frequency plasma chemical vapor deposition method on surface modification of silicon wafer

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Author list: Thungsuk N., Nuchuay P., Hirotani D., Okamura Y., Nakabayashi K., Kinoshita H., Yuji T., Mungkung N., Kasayapanand N.

Publisher: Elsevier

Publication year: 2014

Journal: Vacuum (0042-207X)

Volume number: 109

Start page: 166

End page: 169

Number of pages: 4

ISSN: 0042-207X

eISSN: 1879-2715

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905399551&doi=10.1016%2fj.vacuum.2014.06.029&partnerID=40&md5=61b9f87f0c27047e9600aab874b54c3d

Languages: English-Great Britain (EN-GB)

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Abstract

Even though silicon based solar cell currently has more efficient, the dye sensitized solar cell is considerably cheaper for manufacturing because of its low cost materials and simplicity process of fabrication. In this paper, the development of plasma formed equipments for thin film material on flexible solar cell using low-pressure high-frequency plasma chemical vapor deposition method on the surface of Si wafer with the mixture of Ar gas and O2 gas is presented. The results indicate that using this method can be possible for surface modification. ฉ 2014 Elsevier Ltd. All rights reserved.

Keywords

flexible solar cell, Low pressure, Plasma CVD