Design and implementation of microwave transistor amplifiers using two-section CCITLs

Conference proceedings article

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RARDCHAWADEE SILAPUNT

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Publication Details

Author list: Limsaengruchi S., Silapunt R., Torrungrueng D.

Publisher: Institute of Electrical and Electronics Engineers Inc.

Publication year: 2014

Start page: 1692

End page: 1693

Number of pages: 2

ISBN: 9781479935406

ISSN: 1522-3965

eISSN: 1522-3965

URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84907880553&doi=10.1109%2fAPS.2014.6905172&partnerID=40&md5=2f78b2acbc3a91b906e3f21bd9216838

Languages: English-Great Britain (EN-GB)

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Abstract

A microwave transistor amplifier in the conjugately characteristic impedance transmission line (CCITL) system is designed and implemented using terminated finite lossless reciprocal periodic structures consisting of multiple 2-section microstrip reciprocal lossless transmission lines (TLs). The 2-section TL unit cell is designed at Φ = 15°, the argument of Z0- which is the characteristic impedance of the backward wave associated with CCITLs. The frequencies where simulated and measured S21 peaks are found, are slightly below the designed operating frequency of 2.4 GHz. The measured S21 profile is similar to that obtained from the simulation; however, the overall value is lower due to associated losses in supplementary components. © 2014 IEEE.

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