The development of polyethylene naphthalate films by low-pressure high-frequency plasma chemical vapor deposition system with advance oxidations process
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Author list: Thungsuk N., Yuji T., Mungkung N., Okamura Y., Fujimaru A., Kinoshita H., Hirotani D., Kawano M., Kasayapanand N.
Publisher: Sti; 1998
Publication year: 2015
Journal: Journal of Advanced Oxidation Technologies (1203-8407)
Volume number: 18
Issue number: 1
Start page: 123
End page: 128
Number of pages: 6
ISSN: 1203-8407
Languages: English-Great Britain (EN-GB)
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Abstract
The low-pressure high-frequency plasma chemical vapor deposition (CVD) system was developed with non-thermal plasma process to study the Polyethylene naphthalate (PEN) surface characteristics. Plasma surface treatment by oxygen can improve the adhesive properties. A mixture of Ar and O2 gas was used in the plasma treatment. The oxygen gas flow rate was between 0.1 L/min and 0.5 L/min, whereas the Ar gas flow rate was set at 10 L/min. The surface was investigated by contact angle meter and X-ray photoelectron spectroscopy (XPS) to determine the differences between untreated and treated surfaces. The results indicated that the low-pressure high-frequency plasma chemical vapor deposition system could be used for surface modification. ฉ 2015 Science & Technology Network, Inc.
Keywords
PEN films
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